2SC388 transistor (npn) features power dissipation p cm : 0.3 w (tamb=25 ) collector current i cm : 50 ma collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo ic= 5 ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 4 v collector cut-off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 3 v, i c =0 0.1 a dc current gain h fe(1) v ce = 12.5 v, i c = 12.5 ma 20 200 collector-emitter saturation voltage v ce(sat) i c = 15 ma, i b = 1.5 ma 0.2 v base-emitter saturation voltage v be(sat) i c = 15 ma, i b = 1.5 ma 1.2 v transition frequency f t v ce = 12.5 v, i c = 12.5 ma 300 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 0.8 2 pf power gain gpe v cc = 12.5 v, i c = 12.5 ma, f=45mhz 28 36 db 1 2 3 to-92 1. emitter 2. collector 3. base 2SC388 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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